III-nitride light emitting device with double heterostructure light emitting region

US7880186B2 · kind B2 · utility

Assignees

• KONINKLIJKE PHILIPS ELECTRONICS NV · NL
• Philips Lumileds Lighting Company LLC · US

Inventors

• Nathan Gardner · Provo, US
• Gangyi Chen · San Jose, US
• Werner Goetz · Palo Alto, US
• Michael R. Krames · Los Altos, US
• Gerd O. Mueller · San Jose, US
• Yu-Chen Shen · Sunnyvale, US
• Satoshi Watanabe · Itoigawa, JP

Key dates

• Filing date: Mar 5, 2007
• Grant date: Feb 1, 2011
• Expiry date: Mar 5, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/812

Abstract

In a device, a III-nitride light emitting layer is disposed between an n-type region and a p-type region. A first spacer layer, which is disposed between the n-type region and the light emitting layer, is doped to a dopant concentration between 6×1018 cm−3 and 5×1019 cm−3. A second spacer layer, which is disposed between the p-type region and the light emitting layer, is not intentionally doped or doped to a dopant concentration less than 6×1018 cm−3.