Modulated-Vt transistor

US7880202B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventor

• Peter Baumgartner · Munich, DE

Key dates

• Filing date: Nov 27, 2006
• Grant date: Feb 1, 2011
• Expiry date: Nov 5, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/683

Abstract

A semiconductor field effect transistor can be used with RF signals in an amplifier circuit. The transistor includes a source region and a drain region with a channel region interposed in between the source and drain regions. The transistor is structured such that the threshold voltage for current flow through the channel region varies at different points along the width direction, e.g., to give an improvement in the distortion characteristics of the transistor.