Semiconductor circuit including a long channel device and a short channel device

US7880236B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Andreas Kerber · Mount Kisco, US
• Kingsuk Maitra · Fremont, US

Key dates

• Filing date: Jul 28, 2008
• Grant date: Feb 1, 2011
• Expiry date: Jul 20, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0142

Abstract

A semiconductor circuit is provided that includes a short channel device, and a long channel device that is electrically isolated from the short channel device. The long channel device comprises a plurality of first gate electrodes, a first source region adjacent one of the plurality of first gate electrodes, a first drain region adjacent another of the plurality of first gate electrodes, and a plurality of common source/drain regions positioned between adjacent ones of the plurality of first gate electrodes. The first gate electrodes each overlie portions of a layer of high-dielectric constant (k) gate insulator material. Each of the first gate electrodes are electrically coupled to at least one of the other first gate electrodes.