Semiconductor device and fabricating method thereof
US7880292B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 31, 2007 |
| Grant date | Feb 1, 2011 |
| Priority date | — |
| Expiry date | Aug 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device that allows an image sensor (in an upper area of a SiP semiconductor device) to exchange signals with a device in a lower area of a SiP semiconductor device. A semiconductor device includes at least one of: A semiconductor substrate having a photodiode area and a transistor area. A PMD (Pre Metal Dielectric) layer formed on and/or over the semiconductor substrate. At least one metal layers formed on and/or over the PMD layer. A first penetrating electrode penetrating the PMD layer and the at least one metal layers. A second penetrating electrode penetrating the semiconductor substrate and connected to the first penetrating electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.