Storage element and memory
US7881097B2 · kind B2 · utility
101Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2007 |
| Grant date | Feb 1, 2011 |
| Priority date | — |
| Expiry date | Nov 15, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/935
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is a storage element having a storage layer retaining information based on a magnetization state of a magnetic material; a fixed-magnetization layer having a ferromagnetic layer; and an intermediate layer interposed between the storage layer and the fixed-magnetization layer. In the storage element, spin-polarized electrons are injected in a stacking direction to change a magnetization direction of the storage layer so that information is recorded in the storage layer, and resistivity of the ferromagnetic layer forming the storage layer is 8×10−7 Ωm or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.