Pulsed high-voltage silicon quantum dot fluorescent lamp
US7883387B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2007 |
| Grant date | Feb 8, 2011 |
| Priority date | — |
| Expiry date | Oct 22, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J63/06
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a method for making a pulsed high-voltage silicon quantum dot fluorescent lamp, an excitation source is made by providing a first substrate, coating the first substrate with a buffer layer of titanium, coating the buffer layer with a catalytic layer of a material selected from a group consisting of nickel, aluminum and platinum and providing a plurality of nanometer discharging elements one the catalytic layer. An emission source is made by providing a second substrate, coating the second substrate with a transparent electrode film of titanium nitride and coating the transparent electrode film with a silicon quantum dot fluorescent film comprising silicon quantum dots. A pulsed high-voltage source is provided between the excitation source and the emission source to generate a pulsed field-effect electric field to cause the nanometer discharging elements to release electrons and accelerate the electrons to excite the silicon quantum dots to emit pulsed visible light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.