Method for forming fine pattern with a double exposure technology
US7883836B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 29, 2006 |
| Grant date | Feb 8, 2011 |
| Priority date | — |
| Expiry date | Jul 3, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method for forming a fine pattern of a semiconductor device includes depositing a photoresist film over a semiconductor substrate having an underlying layer, performing a first exposure process using a first exposure mask to form a first photoresist pattern, the first exposure mask defining a first and a second exposure patterns, the first exposure pattern finer than the second exposure pattern, depositing a photoresist film over an entire surface of the resultant including the first photoresist pattern, performing a second exposure process using a second exposure mask to form a second photoresist pattern, the second exposure mask defining a third and a fourth exposure patterns, the third exposure pattern finer than the fourth exposure pattern and disposed between the first exposure patterns, the fourth exposure pattern overlapped with a portion of the second exposure pattern, and patterning the underlying layer using the first and the second photoresist patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.