Methods of manufacturing non-volatile memory devices by implanting metal ions into grain boundaries of variable resistance layers
US7883929B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2008 |
| Grant date | Feb 8, 2011 |
| Priority date | — |
| Expiry date | Oct 31, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/30
Abstract
Integrated circuit nonvolatile memory devices are manufactured by forming a variable resistance layer on an integrated circuit substrate. The variable resistance layer includes grains that define grain boundaries between the grains. Conductive filaments are formed along at least some of the grain boundaries. Electrodes are formed on the variable resistance layer. The conductive filaments may be formed by implanting conductive ions into at least some of the grain boundaries. Moreover, the variable resistance layer may be a variable resistance oxide of a metal, and the conductive filaments may be the metal. Related devices are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.