Method of manufacturing semiconductor device
US7883960B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2009 |
| Grant date | Feb 8, 2011 |
| Priority date | — |
| Expiry date | Jul 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
A method of manufacturing a semiconductor device includes forming a conductive layer over a semiconductor substrate, selectively removing the conductive layer for forming a resistance element and a gate electrode, forming sidewall spacers over sidewalls of the remaining conductive layer, forming a first insulating film containing a nitrogen over the semiconductor substrate having the sidewall spacers, implanting ions in the semiconductor substrate through the first insulating film, forming a second insulating film containing a nitrogen over the first insulating film after implanting ions in the semiconductor substrate through the first insulating film, and selectively removing the first and the second insulating film such that at least a part of the first and the second insulating films is remained over the semiconductor substrate and over the conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.