Method for manufacturing a semiconductor device with reduced floating body effect
US7883979B2 · kind B2 · utility
3Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2004 |
| Grant date | Feb 8, 2011 |
| Priority date | — |
| Expiry date | Nov 3, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, a first device situated on the substrate, the first device including a source and a drain each situated extending a first depth within the substrate, and a second device situated on the substrate, the second device including a source and a drain each situated extending a second depth within the substrate, the second depth not equal to the first depth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.