Patent · US Active

Semiconductor devices and methods of manufacture thereof

US7883987B2 · kind B2 · utility

0Cited by

6References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Armin Tilke · Beacon, US
Frank Huebinger · Poughkeepsie, US
Hermann Wendt · Grasbrunn, DE

Key dates

Filing date	Apr 16, 2010
Grant date	Feb 8, 2011
Priority date	—
Expiry date	Apr 16, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76232
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Semiconductor devices and methods of manufacture thereof are disclosed. In a preferred embodiment, a semiconductor device includes a workpiece and a trench formed within the workpiece. The trench has an upper portion and a lower portion, the upper portion having a first width and the lower portion having a second width, the second width being greater than the first width. A first material is disposed in the lower portion of the trench at least partially in regions where the second width of the lower portion is greater than the first width of the upper portion. A second material is disposed in the upper portion of the trench and at least in the lower portion of the trench beneath the upper portion.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.