Method for increasing the penetration depth of material infusion in a substrate using a gas cluster ion beam
US7883999B2 · kind B2 · utility
2Cited by
8References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2008 |
| Grant date | Feb 8, 2011 |
| Priority date | — |
| Expiry date | Jan 25, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0812
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for infusing material below the surface of a substrate is described. The method comprises modifying a surface condition of a surface on a substrate to produce a modified surface layer, and thereafter, infusing material into the modified surface in the substrate by exposing the substrate to a gas cluster ion beam (GCIB) comprising the material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.