Single-crystal semiconductor layer with heteroatomic macronetwork
US7884352B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Dec 16, 2004 |
| Grant date | Feb 8, 2011 |
| Priority date | — |
| Expiry date | Jul 17, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/29
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a single-crystal layer of a first semiconductor material including single-crystal nanostructures of a second semiconductor material, the nanostructures being distributed in a regular crystallographic network with a centered tetragonal prism.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.