Patent · US Active

Gallium nitride layer with diamond layers

US7884373B2 · kind B2 · utility

10Cited by

6References

20Claims

0Family size

Assignee

Raytheon Company · US

Inventors

Ralph Korenstein · Framingham, US
Steven D. Bernstein · Watertown, US
Stephen J. Pereira · Hopedale, US

Key dates

Filing date	Apr 2, 2010
Grant date	Feb 8, 2011
Priority date	—
Expiry date	Apr 2, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8303
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In one aspect, a method includes fabricating a gallium nitride (GaN) layer with a first diamond layer having a first thermal conductivity and a second diamond layer having a second thermal conductivity greater than the first thermal conductivity. The fabricating includes using a microwave plasma chemical vapor deposition (CVD) process to deposit the second diamond layer onto the first diamond layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.