MRAM with cross-tie magnetization configuration
US7885094B2 · kind B2 · utility
3Cited by
6References
22Claims
0Family size
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Key dates
| Filing date | Apr 25, 2008 |
| Grant date | Feb 8, 2011 |
| Priority date | — |
| Expiry date | Aug 15, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The incidence of half-select errors during MRAM programming has been significantly reduced by giving the free layer a shape that approximates an X so that, when the free layer switches, the magnetization in the arms of the X guides the magnetization in the central section (the X's intersection area) causing it to rotate towards the hard axis in two opposing directions. This raises the free layer's switching energy barrier, thereby reducing half-select errors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.