Adaptive wordline programming bias of a phase change memory
US7885099B2 · kind B2 · utility
5Cited by
1References
7Claims
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Key dates
| Filing date | Sep 18, 2007 |
| Grant date | Feb 8, 2011 |
| Priority date | — |
| Expiry date | Oct 17, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/754
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The leakage current and power consumption of phase change memories may be reduced using adaptive word line biasing. Depending on the particular voltage applied to the bitline of a programmed cell, the word lines of unselected cells may vary correspondingly. In some embodiments, the word line voltage may be caused to match the bitline voltage of the programmed cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.