Patent · US Active

Magnetic tunnel junction cell including multiple vertical magnetic domains

US7885105B2 · kind B2 · utility

61Cited by

6References

24Claims

0Family size

Assignee

QUALCOMM Incorporated · US

Inventors

Xia Li · San Diego, US
Seung H. Kang · San Diego, US
Xiaochun Zhu · San Diego, US

Key dates

Filing date	Mar 25, 2008
Grant date	Feb 8, 2011
Priority date	—
Expiry date	Jul 24, 2029

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/935
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Magnetic tunnel junction cell including multiple vertical domains. In an embodiment, a magnetic tunnel junction (MTJ) structure is disclosed. The MTJ structure includes an MTJ cell. The MTJ cell includes multiple vertical side walls. Each of the multiple vertical side walls defines a unique vertical magnetic domain. Each of the unique vertical magnetic domains is adapted to store a digital value.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.