Patent · US Active

Integrated tapered diode laser arrangement and method for producing it

US7885302B2 · kind B2 · utility

32Cited by

5References

29Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Franz Eberhard · Kilchberg, CH
Thomas Schlereth · Pentling, DE
Wolfgang Schmid · Regensburg, DE

Key dates

Filing date	Feb 27, 2008
Grant date	Feb 8, 2011
Priority date	—
Expiry date	Jul 30, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/3414
WIPO fieldOptics
WIPO sectorInstruments

Abstract

An integrated tapered diode laser arrangement comprises an injector region (2) and a region (3) which is optically coupled to the injector region and expands in a cross section. At least one of said regions (2, 3) has a quantum well structure with a plurality of semiconductor materials, wherein the semiconductor materials are intermixed at least in one region (21, 31). The intermixed region (21, 31) has a larger electrical band gap than a non-intermixed region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.