Nitride-based semiconductor laser device and method of manufacturing the same
US7885304B2 · kind B2 · utility
2Cited by
1References
15Claims
0Family size
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Key dates
| Filing date | Mar 31, 2009 |
| Grant date | Feb 8, 2011 |
| Priority date | — |
| Expiry date | Jun 4, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/185
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A nitride-based semiconductor laser device includes a nitride-based semiconductor layer formed on a main surface of a substrate and having an emission layer, wherein the nitride-based semiconductor layer includes a first side surface formed by a (000-1) plane and a second side surface inclined with respect to the first side surface, and a ridge having an optical waveguide extending perpendicular to a [0001] direction in an in-plane direction of the main surface of the substrate is formed by a region held between the first side surface and the second side surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.