Positive resist composition and pattern forming method using the same
US7887988B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2007 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | May 8, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/111
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist composition, which comprises: (A) a resin containing a repeating unit represented by formula (I); and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation:wherein AR represents a benzene ring or a naphthalene ring; R represents a hydrogen atom, an alkyl group, a cycloalkyl group or an aryl group; Z represents a linking group for forming a ring together with AR; and A represents an atom or group selected from the group consisting of a hydrogen atom, an alkyl group, a halogen atom, a cyano group and an alkyloxycarbonyl group, and a pattern forming method using the resist composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.