Phase-change memory element and method for fabricating the same

US7888155B2 · kind B2 · utility

Assignee

• Industrial Technology Research Institute · TW

Inventor

• Frederick Chen · Hsinchu, TW

Key dates

• Filing date: Mar 16, 2009
• Grant date: Feb 15, 2011
• Expiry date: Aug 1, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8265

Abstract

A phase-change memory element is provided. The phase-change memory element includes: a first electrode formed on a substrate; a first dielectric layer, with an opening, formed on the first electrode, wherein the opening exposes a top surface of the first electrode; a pillar structure formed directly on the first electrode within the opening; an inner phase-change material layer surrounding the pillar structure, directly contacting the first electrode; a second dielectric layer surrounding the inner phase-change material layer; an outer phase-change material layer surrounding the second dielectric layer; a phase-change material collar formed between the second dielectric layer and the first electrode, connecting the inner phase-change material layer with the outer phase-change material layer; and a second electrode formed directly on the pillar structure, directly contacting the top surface of the inner phase-change material layer.