Frederick Chen
70Patents
9h-index
50Co-inventors
81Inventor score
Filing activity: Oct 1, 1999 → Apr 7, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7888155B2 | Phase-change memory element and method for fabricating the same | Electricity | 39 | Active |
| US7679163B2 | Phase-change memory element | Electricity | 22 | Active |
| US6485869B2 | Photomask frame modification to eliminate process induced critical dimension control variation | Physics | 19 | Expired |
| US7964862B2 | Phase change memory devices and methods for manufacturing the same | Electricity | 17 | Active |
| US8642985B2 | Memory Cell | Electricity | 17 | Active |
| US7678606B2 | Phase change memory device and fabrication method thereof | Physics | 14 | Active |
| US7919768B2 | Phase-change memory element | Electricity | 14 | Active |
| US7521372B2 | Method of fabrication of phase-change memory | Physics | 13 | Active |
| US8817521B2 | Control method for memory cell | Physics | 11 | Active |
| US10157962B2 | Resistive random access memory | Electricity | 8 | Active |
| US8624218B2 | Non-volatile memory structure and method for fabricating the same | Electricity | 7 | Active |
| US7919413B2 | Methods for forming patterns | Electricity | 6 | Active |
| US9443587B1 | Resistive memory apparatus and writing method thereof | Physics | 6 | Active |
| US8198620B2 | Resistance switching memory | Electricity | 5 | Active |
| US8426838B2 | Phase-change memory | Electricity | 5 | Active |
| US8604457B2 | Phase-change memory element | Electricity | 4 | Active |
| US9734908B1 | Writing method for resistive memory cell and resistive memory | Physics | 4 | Active |
| US9716223B1 | RRAM device and method for manufacturing the same | Electricity | 4 | Active |
| US6692878B2 | Photomask frame modification to eliminate process induced critical dimension control variation | Physics | 4 | Expired |
| US9257641B2 | Via structure, memory array structure, three-dimensional resistance memory and method of forming the same | Electricity | 4 | Active |
| US9859338B2 | Three-dimensional resistive memory | Electricity | 4 | Active |
| US10522755B2 | Resistive memory and method of fabricating the same | Electricity | 4 | Active |
| US8884260B2 | Phase change memory element | Electricity | 4 | Active |
| US8716099B2 | Phase-change memory | Electricity | 3 | Active |
| US9735352B2 | Phase change memory element | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.