PNP light emitting transistor and method
US7888199B2 · kind B2 · utility
6Cited by
29References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2008 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Feb 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor light-emitting transistor device, including: a bipolar pnp transistor structure having a p-type collector, an n-type base, and a p-type emitter; a first tunnel junction coupled with the collector, and a second tunnel junction coupled with the emitter; and a collector contact coupled with the first tunnel junction, an emitter contact coupled with the second tunnel junction, and a base contact coupled with the base; whereby, signals applied with respect to the collector, base, and emitter contacts causes light emission from the base by radiative recombination in the base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.