Method of producing large area SiC substrates
US7888248B2 · kind B2 · utility
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2References
14Claims
0Family size
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Inventors
Key dates
| Filing date | Jul 13, 2007 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Jun 2, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/259
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for growing a SiC-containing film on a Si substrate is disclosed. The SiC-containing film can be formed on a Si substrate by, for example, plasma sputtering, chemical vapor deposition, or atomic layer deposition. The thus-grown SiC-containing film provides an alternative to expensive SiC wafers for growing semiconductor crystals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.