Cladded silver and silver alloy metallization for improved adhesion electromigration resistance
US7888263B2 · kind B2 · utility
2Cited by
6References
22Claims
0Family size
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Key dates
| Filing date | Sep 25, 2008 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Oct 5, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/179
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In semiconductor integrated circuit and device fabrication interconnect metallization is accomplished by a clad Ag deposited on a SiO2 level on a Si surface. The clad Ag has a layer of an alloy of Ag and Al (5 atomic %) contacting the SiO2, a layer of substantially pure Ag and an outer layer of the Ag and Al alloy. The alloy improves adhesion to the SiO2, avoids agglomeration of the Ag, reduces or eliminates diffusion at the SiO2 surface, reduces electromigration and presents a passive exterior surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.