Nitride-based semiconductor light emitting device with light extraction layer formed within
US7888694B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 22, 2006 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Sep 22, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/872
Abstract
A nitride-based semiconductor light emitting device having an improved structure in which light extraction efficiency is improved and a method of manufacturing the same are provided. The nitride-based semiconductor light emitting device comprises an n-clad layer, an active layer, and a p-clad layer, which are sequentially stacked on a substrate, wherein the n-clad layer comprises a first clad layer, a second clad layer, and a light extraction layer interposed between the first clad layer and the second clad layer and composed of an array of a plurality of nano-posts, the light extraction layer diffracting or/and scattering light generated in the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.