Semiconductor device and manufacturing method thereof
US7888713B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 15, 2007 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Dec 19, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/87
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate including a compound semiconductor, a semiconductor layer formed on a surface of the substrate and a constituent of the semiconductor layer including a nitride semiconductor different from a constituent of the substrate, a via hole provided in the substrate and configured to extend from a rear surface side of the substrate to the semiconductor layer, a ground electrode formed on an inner wall of the via hole, a contact layer provided in the semiconductor layer and configured to extend from a surface of the semiconductor layer to the ground electrode, a gate electrode and a drain electrode, each of which being formed on the semiconductor layer, and a source electrode formed on the semiconductor layer and connected to the ground electrode through the contact layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.