Active pixel sensor with coupled gate transfer transistor
US7888715B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2005 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Sep 7, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8053
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A complementary metal-oxide semiconductor (CMOS) active pixel sensor includes a photodiode, a transfer transistor with a coupled gate, a reset transistor and a signal transfer circuit, where the photodiode generates electric charges in response to incident light, the transfer transistor transfers the electric charges integrated in the photodiode to a floating diffusion node, wherein the transfer transistor has a first transfer gate and a second transfer gate, and the first and second transfer gates have a coupled gate structure, the reset transistor resets a potential level of the floating diffusion node by a given voltage level, the signal transfer circuit transfers the potential level of the floating diffusion node to an internal circuit in response to a selection signal, and the CMOS active pixel sensor with the coupled gate may increase a capacity of the photodiode and reduce an image lag by using a voltage coupling effect of the coupled gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.