Patent · US Active

Magnetic storage device with intermediate layers having different sheet resistivities

US7888755B2 · kind B2 · utility

7Cited by
2References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 26, 2005
Grant dateFeb 15, 2011
Priority date
Expiry dateJul 4, 2029

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/16
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A storage element 3 has an arrangement in which magnetization fixed layers 31 and 32 are provided above and below a storage layer 17 for storing information based on the magnetization state of a magnetic material through intermediate layers 16 and 18, directions of magnetizations M15 and M19 of ferromagnetic layers 15 and 19 closest to the storage layer 17 of the magnetization fixed layers 31 and 32 above and below the storage layer 17 are opposite to each other, the two intermediate layers 16 and 18 above and below the storage layer 17 have a significant difference between sheet resistivity values thereof and in which the direction of a magnetization M1 of the storage layer 17 is changed with application of an electric current to the lamination layer direction to record information on the storage layer 17.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.