MRAM tunnel barrier structure and methods
US7888756B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2007 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Nov 5, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A magnetic tunnel junction (MTJ) structure is of the type having a tunnel barrier positioned between a fixed ferromagnetic layer and a free ferromagnetic layer, the tunnel barrier includes a first barrier layer contacting either the fixed ferromagnetic layer or the free ferromagnetic layer. The first barrier layer transmits a high spin polarization and is selected from the group consisting of metal oxides, metal nitrides, and metal oxynitrides. The second barrier layer, which contacts the first barrier layer, has a low barrier height and is selected from the group consisting of metal oxides, metal nitrides, and metal oxynitrides.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.