Semiconductor device
US7888801B2 · kind B2 · utility
1Cited by
3References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2009 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Aug 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes at least three or more wiring layers stacked in an interlayer insulating film on a semiconductor substrate, a seal ring provided at the outer periphery of a chip region of the semiconductor substrate and a chip strength reinforcement provided in part of the chip region near the seal ring. The chip strength reinforcement is made of a plurality of dummy wiring structures and each of the plurality of dummy wiring structures is formed to extend across and within two or more of the wiring layers including one or none of the bottommost wiring layer and the topmost wiring layer using a via portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.