Microelectronic die having CMOS ring oscillator thereon and method of using same
US7889013B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2007 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | May 1, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/34
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A microelectronic die including a CMOS ring oscillator thereon, and a method of using the same. The microelectronic die includes: a die substrate; and a plurality of CMOS ring oscillators on the die substrate, the ring oscillators being disposed at regions of the die substrate that are adapted to exhibit differing strain responses to package-included stress with respect to one another. A method of determining mechanical stress on a die which includes providing a die substrate in a CMOS ring oscillator on a die substrate. A frequency counter is coupled to the ring oscillator to measure a frequency of the ring oscillator to generate a frequency data signal therefrom. The frequency data signal is used to determine the mechanical stress on the die at a location of the ring oscillator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.