Nitride-based light-emitting device and method of manufacturing the same
US7892874B2 · kind B2 · utility
5Cited by
13References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2009 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | Jun 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.