Semiconductor device and manufacturing method thereof
US7892914B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2007 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | Aug 7, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
Abstract
In a method for manufacturing a semiconductor device, an insulating film is formed on an entire surface of a substrate having a device isolation region and a first and a second conductive region. Then, a semiconductor device structure having a gate electrode forming region is formed on each of the conductive regions, the insulating film being disposed between the gate electrode forming region and each of the conductive regions. A gate electrode groove is formed in the gate electrode forming region of the semiconductor device structure, the insulating film being removed in the gate electrode groove. Thereafter, a gate insulating film and a film of metal gate electrode material are deposited on a bottom surface and a side surface of the gate electrode groove and an alloy is formed by alloying the film of metal gate electrode material deposited in a gate electrode groove of the first conductive region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.