Self aligned integration of high density phase change memory with thin film access device
US7892936B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 2009 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | May 5, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
Embodiments of the present invention provide a method that includes depositing a first electrode film on one or more wordline structures, depositing a phase change material (PCM) film on the first electrode film, depositing a second electrode film on the PCM film, depositing a third electrode film on the second electrode film, depositing an access device film on the third electrode film, and depositing a fourth electrode film on the access device film to form a stack of films, wherein the stack of films comprises the first electrode film, the PCM film, the second electrode film, the third electrode film, the access device film, and the fourth electrode film. Other embodiments may be described and/or claimed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.