Albert Wu
108Patents
15h-index
49Co-inventors
86Inventor score
Filing activity: Sep 15, 1986 → Sep 30, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4794565A | Electrically programmable memory device employing source side injection | Electricity | 205 | Expired |
| US5256594A | Masking technique for depositing gallium arsenide on silicon | Emerging Cross-Sectional Technologies | 73 | Expired |
| US7535110B2 | Stack die packages | Electricity | 59 | Active |
| US7359261B1 | Memory repair system and method | Physics | 41 | Expired |
| US8471376B1 | Integrated circuit packaging configurations | Electricity | 37 | Active |
| US5986934A | Semiconductor memory array with buried drain lines and methods therefor | Physics | 37 | Expired |
| US9087835B2 | Structures embedded within core material and methods of manufacturing thereof | Electricity | 36 | Active |
| US7734966B1 | Method and system for memory testing and test data reporting during memory testing | Physics | 24 | Active |
| US6102339A | Sun-synchronous sun ray blocking device for use in a spacecraft having a directionally controlled main body | Performing Operations; Transporting | 24 | Expired |
| US5881365A | Digital compressed voice paging system which uses R.D.S. format for the ID signals and S.C.A. format for the voice signals both formats being FM subcarriers | Electricity | 23 | Expired |
| US6211547A | Semiconductor memory array with buried drain lines and processing methods therefor | Electricity | 20 | Expired |
| US8008137B2 | Method for fabricating 1T-DRAM on bulk silicon | Electricity | 20 | Active |
| US5453388A | Method of making an EEPROM | Electricity | 17 | Expired |
| US6088577A | Multiple subcarrier communication system | Electricity | 16 | Expired |
| US8030128B1 | Method to form high density phase change memory (PCM) top contact every two bits | Electricity | 15 | Active |
| US7751264B1 | Memory repair system and method | Physics | 14 | Active |
| US8618654B2 | Structures embedded within core material and methods of manufacturing thereof | Electricity | 13 | Active |
| US5317179A | Non-volatile semiconductor memory cell | Electricity | 11 | Expired |
| US5903487A | Memory device and method of operation | Physics | 11 | Expired |
| US7892936B1 | Self aligned integration of high density phase change memory with thin film access device | Electricity | 11 | Active |
| US9768144B2 | Package assembly including a semiconductor substrate in which a first portion of a surface of the semiconductor substrate is recessed relative to a second portion of the surface of the semiconductor substrate to form a recessed region in the semiconductor substrate | Electricity | 10 | Active |
| US7704805B1 | Fuse structures, methods of making and using the same, and integrated circuits including the same | Electricity | 9 | Active |
| US7694440B1 | Insole cushioning device with repelling magnetic field | Human Necessities | 9 | Active |
| US7288845B2 | Fabrication of wire bond pads over underlying active devices, passive devices and/or dielectric layers in integrated circuits | Electricity | 9 | Expired |
| US7939445B1 | High density via and metal interconnect structures, and methods of forming the same | Electricity | 8 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.