Semiconductor device manufacturing method comprising a metal pattern and laser modified regions in a cutting region
US7892949B2 · kind B2 · utility
25Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2006 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | Nov 10, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.