Electron induced chemical etching for device level diagnosis
US7892978B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2006 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | Feb 26, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/24592
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of imaging and identifying materials, contamination, fabrication errors, and defects on and below the surface of an integrated circuit (IC) is described. The method may be used in areas smaller than one micron in diameter, and may remove IC layers, either selectively or non-selectively, until a desired depth is obtained. An energetic beam, such as an electron beam, is directed at a selected IC location. The IC has a layer of a solid, fluid or gaseous reactive material, such as a directed stream of a fluorocarbon, formed over the surface of the IC. The energetic beam disassociates the reactive material in or on the region into chemical radicals that chemically attack the surface. The surface may be examined as various layers are selectively removed in the controlled area spot etch, and SEM imaging may then be used to diagnose problems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.