Method for forming fine patterns of a semiconductor device using a double patterning process
US7892982B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2007 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | Oct 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76838
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming fine patterns of a semiconductor device includes forming an etching film on a substrate having first and second areas, forming first mask patterns on the substrate to have a first pattern density in the first area and a second pattern density in the second area, forming first capping patterns between the first mask patterns, forming second capping patterns between the first mask patterns, such that recess areas are formed between second capping patterns, and such that a first etching pattern is defined to include the first and second capping patterns, forming second mask patterns in the recess areas to include the first and second mask patterns, removing one of the first and second etching patterns, such that a single etching pattern is remaining on the substrate, and etching the etching film using the remaining etching pattern as an etch mask to form etching film patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.