Phase change memory device capable of satisfying reset current characteristic and contact resistance characteristic
US7893421B2 · kind B2 · utility
7Cited by
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10Claims
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Key dates
| Filing date | Jun 11, 2009 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | Jun 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8413
Abstract
A phase change memory device is presented that has a lower electrode contact that has a gradient resistance profile ranging from a lower resistive lower end to a higher resistive upper end. The phase change memory device includes a semiconductor substrate, a lower electrode contact, and a phase change pattern. The semiconductor substrate has a switching device. The lower electrode contact is formed on the switching device and has a specific resistance which gradually increases from a lower part to an upper part of the lower electrode contact. The phase change pattern layer is formed on the lower electrode contact.
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