Semiconductor layer structure with superlattice

US7893424B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Christoph Eichler · Donaustauf, DE
• Alfred Lell · Maxhütte-Haidhof, DE
• Andreas Miler · Kaufering, DE
• Marc Schillgalies · Berlin, DE

Key dates

• Filing date: Jul 20, 2007
• Grant date: Feb 22, 2011
• Expiry date: May 22, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/811
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

The semiconductor layer structure includes a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element, at least two layers of the same type have a different content of the at least one element, the content of the at least one element is graded within a layer of the superlattice, and the layers of the superlattice contain dopants in predefined concentrations, with the superlattice comprising layers that are doped with different dopants. In this way, the electrical, optical and epitaxial properties of the superlattice can be adapted in the best possible manner to given requirements, particularly epitaxial constraints.