Nitride based semiconductor light-emitting device
US7893443B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2006 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | Apr 26, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0<A<1) formed on the n-type clad layer, and a p-type clad layer formed on the active layer wherein the p-type clad layer includes at least a first layer made of p-type Iny2Ga1-y2N (where 0≦y2<1) formed on the active layer and a second layer made of p-type Alx3Iny3Ga(1-x3-y3)N (where 0<x3≦1, 0≦y3≦1, and 0<x3+y3≦1) formed on the first layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.