Electronic device and heterojunction FET

US7893461B2 · kind B2 · utility

Assignee

• SHARP KABUSHIKI KAISHA · JP

Inventor

• John Twynam · Regensburg, DE

Key dates

• Filing date: Jun 15, 2009
• Grant date: Feb 22, 2011
• Expiry date: Jul 4, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

In an electronic device of the present invention a gate Schottky electrode is formed on an active layer constructed of a GaN layer and an AlGaN layer, and a source ohmic electrode and a drain ohmic electrode are further formed on both sides of the gate Schottky electrode on the active layer. A dielectric layer (TiO2 layer) of a stepwise laminate structure is formed on the AlGaN layer so that the electric field distribution between the gate Schottky electrode and the drain ohmic electrode is substantially uniformed. The dielectric constant of TiO2 of the dielectric layer is made higher than the dielectric constant of GaN and AlGaN of the active layer.