Semiconductor FET sensor and method of fabricating the same
US7893466B2 · kind B2 · utility
5Cited by
2References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 20, 2008 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | Jun 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6212
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Provided are a semiconductor Field-Effect Transistor (FET) sensor and a method of fabricating the same. The method includes providing a semiconductor substrate, forming a sensor structure having a fin-shaped structure on the semiconductor substrate, injecting ions for electrical ohmic contact into the sensor structure, and depositing a metal electrode on the sensor structure, immobilizing a sensing material to be specifically combined with a target material onto both sidewall surfaces of the fin-shaped structure, and forming a passage on the sensor structure such that the target material passes through the fin-shaped structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.