Silicon carbide semiconductor device having junction barrier Schottky diode
US7893467B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 2008 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | May 22, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A silicon carbide semiconductor device includes a substrate; a drift layer having a first conductivity type; an insulating layer; a Schottky electrode; an ohmic electrode; a resurf layer; and second conductivity type layers. The drift layer and the second conductivity type layers provide multiple PN diodes. Each second conductivity type layer has a radial width with respect to a center of a contact region between the Schottky electrode and the drift layer. A radial width of one of the second conductivity type layers is smaller than that of another one of the second conductivity type layers, which is disposed closer to the center of the contact region than the one of the second conductivity type layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.