Magnetic memory cell and method of fabricating same
US7894252B2 · kind B2 · utility
3Cited by
4References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 19, 2010 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | Jan 19, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1673
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory cell in which a sensor is magnetically coupled to a magnetic media wherein the separation of the magnetic media from the sensor permits each to be magnetically optimized separate from the other, thus improving defect tolerance and minimizing the magnetic influence of neighboring cells in an array on one another. In an embodiment, the read circuitry is positioned so that no read current passes through the media during a read operation. In an alternative embodiment, processing is simplified but the read current is allowed to pass through the media.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.