Patent · US Active

Carbon filament memory and fabrication method

US7894253B2 · kind B2 · utility

19Cited by
39References
44Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 20, 2007
Grant dateFeb 22, 2011
Priority date
Expiry dateDec 4, 2027

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/30

Abstract

An integrated circuit is described, including a memory element including a first carbon layer rich in a first carbon material and a second carbon layer rich in a second carbon material. The memory element stores information by reversibly forming a conductive channel in the second carbon layer, wherein the conductive channel includes the first carbon material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.