Carbon filament memory and fabrication method
US7894253B2 · kind B2 · utility
19Cited by
39References
44Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2007 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | Dec 4, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/30
Abstract
An integrated circuit is described, including a memory element including a first carbon layer rich in a first carbon material and a second carbon layer rich in a second carbon material. The memory element stores information by reversibly forming a conductive channel in the second carbon layer, wherein the conductive channel includes the first carbon material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.