Method for making a silicon quantum dot fluorescent lamp
US7896723B2 · kind B2 · utility
1Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2007 |
| Grant date | Mar 1, 2011 |
| Priority date | — |
| Expiry date | Oct 24, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J63/04
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A silicon quantum dot fluorescent lamp is made via providing a high voltage source between a cathode assembly and an anode assembly. The cathode assembly is made by providing a first substrate, coating a buffer layer on the first substrate, coating a catalytic layer on the buffer layer and providing a plurality of nanometer discharging elements on the catalytic layer. The anode assembly is made via providing a second substrate, coating a silicon quantum dot fluorescent film on the second substrate with and coating a metal film on the silicon quantum dot fluorescent film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.