Method of producing a semiconductor device with an aluminum or aluminum alloy rear electrode
US7897452B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2006 |
| Grant date | Mar 1, 2011 |
| Priority date | — |
| Expiry date | Nov 19, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
A method of producing a semiconductor device having a thickness of 90 μm to 200 μm and with an electrode on the rear surface, which achieves a high proportion of non-defective devices by optimizing the silicon concentration and thickness of the aluminum-silicon electrode. A surface device structure is formed on a first major surface of a silicon substrate. A buffer layer and a collector layer are formed on the second major surface after grinding to reduce the thickness of the substrate. On the collector layer, a collector electrode is formed including a first layer of an aluminum-silicon film having a thickness of 0.3 μm to 1.0 μm and a silicon concentration of 0.5 percent to 2 percent by weight, preferably not more than 1 percent by weight.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.