Method and apparatus to improve the reliability of the breakdown voltage in high voltage devices
US7897471B2 · kind B2 · utility
5Cited by
12References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 19, 2008 |
| Grant date | Mar 1, 2011 |
| Priority date | — |
| Expiry date | Oct 6, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/23
Abstract
A structure to diminish high voltage instability in a high voltage device when under stress includes an amorphous silicon layer over a field oxide on the high voltage device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.